Repairable Polymer Solid Electrolyte Gated MoS ₂ Field Effect Devices with Large Radiation Tolerance

As human activities expand into naturally or man-made radiation-prone environment, the need for radiation-hardened (Rad-Hard) electronic hardware surges. The state-of-the-art silicon-based and 2D materials-based Rad-Hard transistors can withstand up to 1 Mrad (Si) of total ionization dose (TID), while higher TID tolerance is being heatedly sought after. Here, few-layer MoS2 field-effect (FETs) with polymer solid electrolyte (PSE) gate dielectrics are presented. PSE-FETs exhibit a 3.75 at rate 523 rad s?1 be repaired moderate thermal annealing 100 °C 5 min. Combining excellent intrinsic radiation reparability, reach 10 (Si). Complementary metal–oxide–semiconductor-like PSE-inverters built show high as well. Furthermore, feasibility wafer-scale PSE-inverter array demonstrated using chemical vapor deposition grown monolayer MoS2. These studies uncover potential PSE devices in future integrated circuits.